GRP(CSM)三点弯曲梁松弛实验

本文对短玻璃纤维毡增强聚酯玻璃钢的三点弯曲梁试件的松弛行为进行了实验研究。并通过有限元分析与实验结果的比较,建立了一个初步的“变剪切模量G_(13)(t)”模型。

Creep behavior of woven roving grp beam in three-point bending

The creep and relaxation behaviour of laminated glass fibre reinforced plastics (GRP) in three-point bending were studied both experimentally and analytically. Creep and relaxation experiments were carried out on eight types of specimens, consisting of glass fibre fabric reinforced epoxy beams. While the bending deflexion and creep strains were measured in the creep tests, the load and relaxation strain were recorded in the relaxation tests. Marked creep effects were seen in the tests, where the environment temperature was 50°C and the period of the measurement was 60 min. An attempt to predict the creep deflexion and relaxation behaviour was made. The transverse shear effect on creep deflexion was taken into account. The predicted results were compared with experimental ones. They were found to be in reasonable agreement, but the linearization assumption, upon which the relaxation behaviour analysis was based, appears to lead to larger inaccuracies in the results.

Shock wave diffraction by a square cavity filled with dusty gas

A simple two-dimensional square cavity model is used to study shock attenuating effects of dust suspension in air. The GRP scheme for compressible flows was extended to simulate the fluid dynamics of dilute dust suspensions, employing the conventional two-phase approximation. A planar shock of constant intensity propagated in pure air over Aat ground and diffracted into a square cavity filled with a dusty quiescent suspension. Shock intensities were M-s = 1.30 and M-s = 2.032, dust loading ratios were alpha = 1 and alpha = 5, and particle diameters were d = 1, 10 and 50 mum. It was found that the diffraction patterns in the cavity were decisively attenuated by the dust suspension, particularly for the higher loading ratio. The particle size has a pronounced effect on the flow and wave pattern developed inside the cavity. Wall pressure historics were recorded for each of the three cavity walls, showing a clear attenuating effect of the dust suspension.

CSM玻璃钢层间剪切断裂

本文对CSM-GRP层间剪切断裂用实验与分析方法进行了研究。用英国标准BS4994规定的双槽试件拉剪法测量了层间剪切强度(ILSS)。用有限元法计算了应力分布、损伤扩展和复合型应力强度因子。并讨论了BS4994规定的这一试验方法的可靠性。

水稻(Oryza sativa L. ssp japonica)幼苗根质膜蛋白质组分析

根质膜具有重要的生物学功能，它参与了根响应脱落酸（ABA）的一系列活动。尽管已经有很多有关ABA影响根的生长和发育的报道，但是在蛋白质组水平上研究参与ABA信号转导及相关活动的质膜蛋白质的报道还未见到。我们期望利用蛋白质组学技术平台研究外源ABA胁迫下水稻根质膜与ABA功能相关的蛋白质组的变化。 本论文通过双向电泳（2DE）结合质谱（MALDI-TOF MS 和 MALDI-TOF/TOF MS）分析的方法鉴定了102个质膜相关蛋白质。这些蛋白质功能涉及到跨膜运输（16.2%）、胁迫反应（14.3%）、物质运输（4.8%）、细胞骨架动态变化（5.7%）、细胞壁重建（3.8%）、碳代谢和能量循环（13.3%）、蛋白质代谢（14.3%）、信号转导（18.1%）和其他功能的蛋白质（4.8%），以及未知功能的蛋白质（2.9%）。其中大约30％的蛋白质以同工型的形式存在。在这些鉴定结果中，有10个斑点（代表10种蛋白质）已被报道为质膜特异的蛋白质;68个蛋白质斑点（代表58种蛋白质）是质膜相关蛋白质。其余54个蛋白质斑点（代表42种蛋白质）是首次在水稻根的质膜囊泡中被鉴定出来。 在ABA处理条件下，我们在2DE胶上发现了15个响应ABA调节的蛋白质斑点。9个上调的蛋白质斑点分别代表以下9种蛋白质：vacuolar proton-ATPase A subunit, vacuolar ATPase B subunit、patatin、 Salt-stress root protein RS1、谷氨酰氨合成酶（Glutamine synthetase，GS）、OSR40c1、H+-exporting ATPase （vacuolar ATPase E subunit）、甘油醛-3-磷酸脱氢酶I型（glyceraldehyde-3- phosphate dehydrogenase, type I，GADPH）和醛缩酶C-1（aldolase C-1）。6个下调的蛋白质斑点分别代表4种蛋白质：endosperm lumenal binding protein、remorin protein、富含脯氨酸蛋白质（glycine-rich protein，GRP）和蔗糖合成酶（sucrose synthase, SuSy）。其中，OSR40c1和endosperm lumenal binding protein与蛋白质合成相关，从它们与ABA的关系中可以看出，ABA可能抑制了细胞的蛋白质合成。而vacuolar proton-ATPase A subunit、vacuolar ATPase B subunit和 H+-exporting ATPase参与了细胞质pH的调控，ABA致使了细胞质pH的上升。甘油醛-3-磷酸脱氢酶I型、醛缩酶C-1和蔗糖合酶参与了细胞壁的生长发育，ABA的作用可能导致了细胞壁生长发育的延迟。ABA促使Patatin上升，其作用可能与质膜膜脂的降解有关。而ABA的刺激也使谷氨酰氨合成酶的表达显著上升，谷氨酰氨合成酶可以去除细胞内有害的游离NH+4。同时还有未知功能的富含脯氨酸蛋白质（glycine-rich protein，GRP）同样受到ABA的诱导，但具体的功能及其与ABA的关系还要进一步的实验证据。

Performing Fast Addition and Multiplication by Transferring Single Electrons

This paper proposes novel fast addition and multiplication circuits that are based on non-binary redundant number systems and single electron (SE) devices. The circuits consist of MOSFET-based single-electron (SE) turnstiles. We use the number of electrons to represent discrete multiple-valued logic states and we finish arithmetic operations by controlling the number of electrons transferred. We construct a compact PD2,3 adder and a 12x12bit multiplier using the PD2,3 adder. The speed of the adder can be as high as 600MHz with 400nW power dissipation. The speed of the adder is regardless of its operand length. The proposed circuits have much smaller transistors than conventional circuits.

A New Technique for Side Pumping of Double-Clad Fiber Lasers

We report a new technique, called SAP, for side pumping of double-clad, rare-earth-doped fiber lasers using fiber-coupled pump sources. The highest coupling efficiency can even exceed 92% in theory with this structure.

Influence of dispersive coupling coefficient in microring channel drop filters

Wide transmission dips are observed in the through spectra in microring and racetrack channel drop filters by two-dimensional finite-difference time-domain (FDTD) simulation. The transmission spectra, which reflect the coupling efficiency, are also calculated from the FDTD output as the pulse just travels one circle inside the resonator. The results indicate that the dips are caused by the dispersion of the coupling coefficient between the input waveguide and the resonator. In addition, a near-zero channel drop on resonance and a large channel drop off resonance are observed due to the near zero coupling coefficient and a large coupling coefficient, respectively. If the width of the input waveguide is different from that of the ring resonator, the oscillation of the coupling coefficient can be greatly suppressed.

A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth

A novel approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. The active layer consists of graded tensile strained bulk-like structure. which can not only enhance TM mode material gain and further realize polarization-insensitivity, but also get a large 3dB bandwidth due to different strain introduced into the active layer. 3dB bandwidth more than 40nm. 65nm has been obtained in die experiment and theory, respectively. The characteristics of such polarization insensitive structure have been analyzed, The influence of the amount of strain and of the thickness of strain layer on the polarization insensitivity has been discussed.

Optical characterization of the Ge/Si (001) islands in multilayer structure

We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.

Integrated MMI optical couplers and optical switches in Silicon-on-insulator technology

Integrated multimode interference coupler based on silicon-on-insulator has been become a kind of more and more attractive device in optical systems. Thin cladding layers (<1.0mum) can be used in SOI waveguide due to the large index step between Si and SiO2, making them compatible with the VLSI technology. Here we demonstrate the design and fabrication of multimode interference (MMI) optical couplers and optical switches in SOI technology.

High-speed DFB laser and EMLs

High speed reliable 1.55 mum AlGaInAs multi-quantum well ridge waveguide (RW) DFB laser is developed with a 9GHz -3dB bandwidth. A high speed self aligned constricted mesa 1.55 mum DFB laser is achieved with a 9.1GHz -3dB bandwidth and a more than 20mW output power. A cost effective single RW electroabsorption modulated DFB laser (EMLs) is proposed and successfully fabricated by adopting selective area growth techniques:. a penalty free transmission at 2.5Gbps over 280Km normal G.652 single mode fiber is realized by using this EML as light source. For achieving a better performance EMLs. a gain-coupled DFB laser with etched quantum wells is successfully integrated with a electroabsorption modulator (EAM) for a high single mode yield. the wavelength of a EML is tuned in a 3.2nm range by a integrated thin-film heater for the wavelength routing. a buried heterostructure DFB laser is also successfully integrated with a RW EAM for a lower threshold current. lower EAM parasitic capacitance and higher output power.

16-channel 0.35 mu m CMOS/VCSEL optoelectronic devices

We report some investigations on vertical cavity surface emitting laser (VCSEL) arrays and VCSEL based optoelectronic smart photonic multiple chip modules (MCM), consisting of 1 x 16 vertical cavity surface emitting laser array and 16-channel lasers driver 0.35 mum CMOS circuit. The hybrid integrated multiple chip modules based on VCSEL operate at more than 2GHz in -3dB frequency bandwidth.

1.3 mu m GaInNAs/GaAs quantum well lasers and photodetectors

The growth of GalnNAs/GaAs quantum well (QW) has been investigated by solid-source molecular beam epitaxy (MBE). N was introduced by a dc-active plasma source. Highest N concentration of 2.6% in GaInNAs/GaAs QW was obtained, corresponding to the photoluminescence peak wavelength of 1.57 mum at 10K. The nitrogen incorporation behavior in MBE growth and the quality improvement of the QW have been studied in detail. 1.3 mum GaInNAs/GaAs SQW laser and MQW resonant-cavity enhanced photodetector have been achieved.

Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing

The quantum well intermixing of Ga(In)NAs/GaAs simple quantum well (SQW) using SiO2 encapsulation and rapid thermal annealing has been studied. Obvious enhanced intermixing of GaInNAs/GaAs SQW was observed due to the localized SiO2 capping layer and RTA at temperature between 650degreesC and 900degreesC. The selective intermixing strongly depends on N composition and In composition. An obvious selective intermixing had been found in the samples with small N composition and/or high In composition.